Abstract
During the scheduled high luminosity upgrade of the LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face a more intense radiation environment than the present system was designed for. To upgrade the tracker to the required performance level, extensive measurements and simulation studies have already been carried out.
A defect model for the bulk properties of proton irradiated silicon has been created with the Synopsys Sentaurus TCAD simulation package which produces simulated results that closely match the measured properties of silicon strip detectors. However, the expected behaviour due to increased surface damage is not so well predicted by the model. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependence of the strip detector's charge collection efficiency (CCE). In this paper a procedure to find a defect model that reproduces the correct CCE loss, along with other surface properties of a strip detector up to a fluence 1.5×1015 1 MeV neq cm−2 (Φeq), will be presented. When applied to CCE loss measurements at different fluences, this method may provide a means for the parametrization of the accumulation of oxide charge at the SiO2/Si interface as a function of dose.