Abstract
Silicon-On-Insulator (SOI) technology was used to develop a fine pixelated detector with high performance. The first beam test for a prototype pulse-counting-type SOI chip, CPIXTEG3b, was performed at beamline BL-14A of the Photon Factory, KEK. CPIXTEG3b was designed using double SOI technology for decreasing crosstalk and increasing radiation hardness. It has a 64 × 64 pixel array wherein each pixel size is 50 μm × 50 μm. The sensitivity to incident X-rays was measured for each pixel with an X-ray beam 10 μm in diameter. We used the X-ray energy of 16 keV. Because of its small size, the pixel response was sensitive to the charge-sharing effect. We also considered the point spread function of the sensor. The discriminator of each pixel circuit was calibrated using a pulse generator, and performance was checked using flat-field X-rays.