Abstract
A nearest neighbour tight binding approximation for analysing the I-V characteristics of ballistic CNTFETs is developed making use of the non-equilibrium green's function (NEGF) formalism. NEGF provides a matrix based computational since device description at the atomic level can be employed and multiple quantum phenomenon that are visible in real time can be effectively modelled. The proposed model involves zig-zag CNTs as the channel material with a 25nm channel length that uses a basis transformation to decouple the channel Hamiltonian. Temperature dependence on the output characteristics of CNTFETs with varying chirality is also studied. All simulations are carried out on MATLAB.
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