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Intrinsic Characteristics of Bi(Zn1/2Ti1/2)O3 - substituted Pb(Zr0.4Ti0.6)O3 Thin Films

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, , Citation M T Chentir et al 2011 IOP Conf. Ser.: Mater. Sci. Eng. 18 092008 DOI 10.1088/1757-899X/18/9/092008

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1 Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259-J2-43, Nagatsuta-cho, Midori-ku, Yokohama, 226-8502, Japan

2 Fujitsu Laboratories, Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

3 Toshima Manufacturing Co., Ltd. 1414 Shimonomoto, Higashimatsuyama, Saitama 355-0036, Japan

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1757-899X/18/9/092008

Abstract

In this paper we investigated the intrinsic impact of Bi(Zn1/2Ti1/2)O3 (BZT) addition on the crystallographic and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 (PZT) thin films deposited by sol-gel technique. We could emphasis the shrinkage of lattice parameters, leading to a decrease of spontaneous polarization, with increasingly BZT content. This result is coherent with predicted evolution of spontaneous polarization with unit cell tetragonality.

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10.1088/1757-899X/18/9/092008