Abstract
Crystalline quality and the silanoles defects (Si-OH) present within the structure of natural SiO2 play an important role in its reactivity. In this work, the relationship between the loss of silanoles and the crystallinity improvement upon heating between 450 °C and 650 °C was shown using X-Ray Diffraction (XRD) and Fourier Transform mid Infrared Spectroscopy in Attenuated Total Reflection (ATR). A shift of the principal band Si-O-Si from 1078 cm−1 to 1082 cm−1 and the decrease of the intensity of the Si-OH bands at 555cm−1and at 950cm−1 upon heating between 450 °C and 650 °C were shown. The reduction of the band is correlated to the loss of silanoles. In agreement with FT-IR results, the decrease of the FWHM of the XRD peaks shows that the crystalline quality is improved upon heating. This result leads to a decrease of the reactivity of SiO2 aggregate under chemical attacks.
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