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Dependence of Tunnel Magnetoresistance Effect on Fe Thickness of Perpendicularly Magnetized L10-Mn62Ga38/Fe/MgO/CoFe Junctions

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Published 29 March 2012 • ©2012 The Japan Society of Applied Physics
, , Citation Takahide Kubota et al 2012 Appl. Phys. Express 5 043003 DOI 10.1143/APEX.5.043003

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1 WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan

2 Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

Dates

  1. Received 20 February 2012
  2. Accepted 10 March 2012
  3. Published

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Abstract

The tunnel magnetoresistance (TMR) ratio in a magnetic tunnel junction (MTJ) with an L10-Mn62Ga38/Fe/MgO/CoFe structure was considerably improved by Fe layer insertion. A maximum TMR ratio of 24% was observed in an MTJ with a Fe thickness of 1.1 nm at room temperature, which corresponded to a 57% TMR ratio in the case of a complete antiparallel magnetization configuration. Fe layer thickness dependences of the magnetization curve and TMR effect were also investigated. It was revealed that the magnetization of Fe on 30-nm-thick MnGa could be fixed in a perpendicular direction when the thickness of the Fe was below 2.0 nm.

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10.1143/APEX.5.043003