Dynamical Spin Injection into p-Type Germanium at Room Temperature

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Published 30 January 2013 • ©2013 The Japan Society of Applied Physics
, , Citation Mariko Koike et al 2013 Appl. Phys. Express 6 023001 DOI 10.7567/APEX.6.023001

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1 Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

2 Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan

Dates

  1. Received 13 December 2012
  2. Accepted 12 January 2013
  3. Published

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Abstract

We demonstrate dynamical spin injection into p-type germanium (Ge) at room temperature (RT) using spin pumping. The generated pure spin current is converted to a charge current by the inverse spin-Hall effect (ISHE) arising in the p-type Ge sample. A clear electromotive force due to the ISHE is detected at RT. The spin-Hall angle for p-type Ge is roughly estimated to be θSHE = 9.6×10-4 at RT.

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10.7567/APEX.6.023001