Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride

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Published 13 June 2013 • Copyright (c) 2013 The Japan Society of Applied Physics
, , Citation Takehiro Yamaguchi et al 2013 Appl. Phys. Express 6 073001 DOI 10.7567/APEX.6.073001

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Author affiliations

1 Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

2 Institute for Nano Quantum Information Electronics, University of Tokyo, Meguro, Tokyo 153-8505, Japan

3 National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

4 PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan

Dates

  1. Received 19 April 2013
  2. Accepted 27 May 2013
  3. Published

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Abstract

We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.

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10.7567/APEX.6.073001