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Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy
Daisuke Nakamura1 and Taishi Kimura1
Published 22 May 2018 •
© 2018 The Japan Society of Applied Physics
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Citation Daisuke Nakamura and Taishi Kimura 2018 Appl. Phys. Express 11 065502
DOI 10.7567/APEX.11.065502
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