Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs. Here, we numerically investigate with a macrospin Landau–Lifshitz-Gilbert equation solver the use of pMTJs driven by spin–orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probability tree. The tree operates by dynamically biasing sequences of pMTJ relaxation events, called 'coinflips', via an additional applied spin-transfer-torque current. Specifically, using a single, ideal pMTJ device we successfully draw integer samples on the interval [0, 255] from an exponential distribution based on p-value distribution analysis. In order to investigate device-to-device variations, the thermal stability of the pMTJs are varied based on manufactured device data. It is found that while repeatedly using a varied device inhibits ability to recover the probability distribution, the device variations average out when considering the entire set of devices as a 'bucket' to agnostically draw random numbers from. Further, it is noted that the device variations most significantly impact the highest level of the probability tree, with diminishing errors at lower levels. The devices are then used to draw both uniformly and exponentially distributed numbers for the Monte Carlo computation of a problem from particle transport, showing excellent data fit with the analytical solution. Finally, the devices are benchmarked against CMOS and memristor RNGs, showing faster bit generation and significantly lower energy use.
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Nanotechnology encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects.
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Andrew Maicke et al 2024 Nanotechnology 35 275204
Syed Nabeel Ahmed and Waseem Haider 2018 Nanotechnology 29 342001
There has been a considerable amount of research in the development of sustainable water treatment techniques capable of improving the quality of water. Unavailability of drinkable water is a crucial issue especially in regions where conventional drinking water treatment systems fail to eradicate aquatic pathogens, toxic metal ions and industrial waste. The research and development in this area have given rise to a new class of processes called advanced oxidation processes, particularly in the form of heterogeneous photocatalysis, which converts photon energy into chemical energy. Advances in nanotechnology have improved the ability to develop and specifically tailor the properties of photocatalytic materials used in this area. This paper discusses many of those photocatalytic nanomaterials, both metal-based and metal-free, which have been studied for water and waste water purification and treatment in recent years. It also discusses the design and performance of the recently studied photocatalytic reactors, along with the recent advancements in the visible-light photocatalysis. Additionally, the effects of the fundamental parameters such as temperature, pH, catalyst-loading and reaction time have also been reviewed. Moreover, different techniques that can increase the photocatalytic efficiency as well as recyclability have been systematically presented, followed by a discussion on the photocatalytic treatment of actual wastewater samples and the future challenges associated with it.
Daniele Ielmini and Stefano Ambrogio 2020 Nanotechnology 31 092001
Artificial intelligence (AI) has the ability of revolutionizing our lives and society in a radical way, by enabling machine learning in the industry, business, health, transportation, and many other fields. The ability to recognize objects, faces, and speech, requires, however, exceptional computational power and time, which is conflicting with the current difficulties in transistor scaling due to physical and architectural limitations. As a result, to accelerate the progress of AI, it is necessary to develop materials, devices, and systems that closely mimic the human brain. In this work, we review the current status and challenges on the emerging neuromorphic devices for brain-inspired computing. First, we provide an overview of the memory device technologies which have been proposed for synapse and neuron circuits in neuromorphic systems. Then, we describe the implementation of synaptic learning in the two main types of neural networks, namely the deep neural network and the spiking neural network (SNN). Bio-inspired learning, such as the spike-timing dependent plasticity scheme, is shown to enable unsupervised learning processes which are typical of the human brain. Hardware implementations of SNNs for the recognition of spatial and spatio-temporal patterns are also shown to support the cognitive computation in silico. Finally, we explore the recent advances in reproducing bio-neural processes via device physics, such as insulating-metal transitions, nanoionics drift/diffusion, and magnetization flipping in spintronic devices. By harnessing the device physics in emerging materials, neuromorphic engineering with advanced functionality, higher density and better energy efficiency can be developed.
R Jalal et al 2024 Nanotechnology 35 265705
W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol–gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis of p–n heterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current–voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range. The resulting device exhibits a rectification ratio RR of 5587 at ±5 V, a higher responsivity of 3.84 A W−1 and a photosensitivity value of 34 at 365 nm under 0.5 mW cm−2. The experimental findings reveal that the UV detection performance of the heterojunction-based photodetectors strongly dependent on the properties of metal oxide layer. The main goal of this work is to investigate the effect of W doping on the performance of ZnO/Si based photodetectors. Based on our results, it is observed that 2 at% of W dopant is the optimum amount of doping for high performance photodetector of ZnO:W/Si heterojunction thanks to the suppressed recombination ratio and enhanced carrier separation properties in the depletion zone.
Achint Jain et al 2018 Nanotechnology 29 265203
Integrating layered two-dimensional (2D) materials into 3D heterostructures offers opportunities for novel material functionalities and applications in electronics and photonics. In order to build the highest quality heterostructures, it is crucial to preserve the cleanliness and morphology of 2D material surfaces that come in contact with polymers such as PDMS during transfer. Here we report that substantial residues and up to ∼0.22% compressive strain can be present in monolayer MoS2 transferred using PDMS. We show that a UV-ozone pre-cleaning of the PDMS surface before exfoliation significantly reduces organic residues on transferred MoS2 flakes. An additional 200 ◦C vacuum anneal after transfer efficiently removes interfacial bubbles and wrinkles as well as accumulated strain, thereby restoring the surface morphology of transferred flakes to their native state. Our recipe is important for building clean heterostructures of 2D materials and increasing the reproducibility and reliability of devices based on them.
Lior Shani et al 2024 Nanotechnology 35 255302
Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.
Yi-Teng Huang et al 2021 Nanotechnology 32 132004
Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.
Arne Laucht et al 2021 Nanotechnology 32 162003
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.
Karl Berggren et al 2021 Nanotechnology 32 012002
Recent progress in artificial intelligence is largely attributed to the rapid development of machine learning, especially in the algorithm and neural network models. However, it is the performance of the hardware, in particular the energy efficiency of a computing system that sets the fundamental limit of the capability of machine learning. Data-centric computing requires a revolution in hardware systems, since traditional digital computers based on transistors and the von Neumann architecture were not purposely designed for neuromorphic computing. A hardware platform based on emerging devices and new architecture is the hope for future computing with dramatically improved throughput and energy efficiency. Building such a system, nevertheless, faces a number of challenges, ranging from materials selection, device optimization, circuit fabrication and system integration, to name a few. The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges and opportunities in this burgeoning field.
U Banin et al 2021 Nanotechnology 32 042003
This roadmap on Nanotechnology for Catalysis and Solar Energy Conversion focuses on the application of nanotechnology in addressing the current challenges of energy conversion: 'high efficiency, stability, safety, and the potential for low-cost/scalable manufacturing' to quote from the contributed article by Nathan Lewis. This roadmap focuses on solar-to-fuel conversion, solar water splitting, solar photovoltaics and bio-catalysis. It includes dye-sensitized solar cells (DSSCs), perovskite solar cells, and organic photovoltaics. Smart engineering of colloidal quantum materials and nanostructured electrodes will improve solar-to-fuel conversion efficiency, as described in the articles by Waiskopf and Banin and Meyer. Semiconductor nanoparticles will also improve solar energy conversion efficiency, as discussed by Boschloo et al in their article on DSSCs. Perovskite solar cells have advanced rapidly in recent years, including new ideas on 2D and 3D hybrid halide perovskites, as described by Spanopoulos et al 'Next generation' solar cells using multiple exciton generation (MEG) from hot carriers, described in the article by Nozik and Beard, could lead to remarkable improvement in photovoltaic efficiency by using quantization effects in semiconductor nanostructures (quantum dots, wires or wells). These challenges will not be met without simultaneous improvement in nanoscale characterization methods. Terahertz spectroscopy, discussed in the article by Milot et al is one example of a method that is overcoming the difficulties associated with nanoscale materials characterization by avoiding electrical contacts to nanoparticles, allowing characterization during device operation, and enabling characterization of a single nanoparticle. Besides experimental advances, computational science is also meeting the challenges of nanomaterials synthesis. The article by Kohlstedt and Schatz discusses the computational frameworks being used to predict structure–property relationships in materials and devices, including machine learning methods, with an emphasis on organic photovoltaics. The contribution by Megarity and Armstrong presents the 'electrochemical leaf' for improvements in electrochemistry and beyond. In addition, biohybrid approaches can take advantage of efficient and specific enzyme catalysts. These articles present the nanoscience and technology at the forefront of renewable energy development that will have significant benefits to society.
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Haonan Zhao et al 2024 Nanotechnology 35 292002
Recent advances in materials science, device designs and advanced fabrication technologies have enabled the rapid development of transient electronics, which represents a class of devices or systems that their functionalities and constitutions can be partially/completely degraded via chemical reaction or physical disintegration over a stable operation. Therefore, numerous potentials, including zero/reduced waste electronics, bioresorbable electronic implants, hardware security, and others, are expected. In particular, transient electronics with biocompatible and bioresorbable properties could completely eliminate the secondary retrieval surgical procedure after their in-body operation, thus offering significant potentials for biomedical applications. In terms of material strategies for the manufacturing of transient electronics, silicon nanomembranes (SiNMs) are of great interest because of their good physical/chemical properties, modest mechanical flexibility (depending on their dimensions), robust and outstanding device performances, and state-of-the-art manufacturing technologies. As a result, continuous efforts have been made to develop silicon-based transient electronics, mainly focusing on designing manufacturing strategies, fabricating various devices with different functionalities, investigating degradation or failure mechanisms, and exploring their applications. In this review, we will summarize the recent progresses of silicon-based transient electronics, with an emphasis on the manufacturing of SiNMs, devices, as well as their applications. After a brief introduction, strategies and basics for utilizing SiNMs for transient electronics will be discussed. Then, various silicon-based transient electronic devices with different functionalities are described. After that, several examples regarding on the applications, with an emphasis on the biomedical engineering, of silicon-based transient electronics are presented. Finally, summary and perspectives on transient electronics are exhibited.
P Mukherjee et al 2024 Nanotechnology 35 295502
Numerous efforts have been undertaken to mitigate the Debye screening effect of FET biosensors for achieving higher sensitivity. There are few reports that show sub-femtomolar detection of biomolecules by FET mechanisms but they either suffer from significant background noise or lack robust control. In this aspect, deformed/crumpled graphene has been recently deployed by other researchers for various biomolecule detection like DNA, COVID-19 spike proteins and immunity markers like IL-6 at sub-femtomolar levels. However, the chemical vapor deposition (CVD) approach for graphene fabrication suffers from various surface contamination while the transfer process induces structural defects. In this paper, an alternative fabrication methodology has been proposed where glass substrate has been initially texturized by wet chemical etching through the sacrificial layer of synthesized silver nanoparticles, obtained by annealing of thin silver films leading to solid state dewetting. Graphene has been subsequently deposited by thermal reduction technique from graphene oxide solution. The resulting deformed graphene structure exhibits higher sensor response towards glial fibrillary acidic protein (GFAP) detection with respect to flat graphene owing to the combined effect of reduced Debye screening and higher surface area for receptor immobilization. Additionally, another interesting aspect of the reported work lies in the biomolecule capture by dielectrophoretic (DEP) transport on the crests of the convex surfaces of graphene in a coplanar gated topology structure which has resulted in 10 aM and 28 aM detection limits of GFAP in buffer and undiluted plasma respectively, within 15 min of application of analyte. The detection limit in buffer is almost four decades lower than that documented for GFAP using biosensors which is is expected to pave way for advancing graphene FET based sensors towards ultrasensitive point-of-care diagnosis of GFAP, a biomarker for traumatic brain injury.
Dongseong Yang et al 2024 Nanotechnology 35 295202
Achieving energy-efficient and high-performance field-effect transistors (FETs) is one of the most important goals for future electronic devices. This paper reports semiconducting single-walled carbon nanotube FETs (s-SWNT-FETs) with an optimized high-k relaxor ferroelectric insulator P(VDF-TrFE-CFE) thickness for low-voltage operation. The s-SWNT-FETs with an optimized thickness (∼800 nm) of the high-k insulator exhibited the highest average mobility of 14.4 cm2 V−1s−1 at the drain voltage (ID) of 1 V, with a high current on/off ratio (Ion/off >105). The optimized device performance resulted from the suppressed gate leakage current (IG) and a sufficiently large capacitance (>50 nF cm−2) of the insulating layer. Despite the extremely high capacitance (>100 nF cm−2) of the insulating layer, an insufficient thickness (<450 nm) induces a high IG, leading to reduced ID and mobility of s-SWNT-FETs. Conversely, an overly thick insulator (>1200 nm) cannot introduce sufficient capacitance, resulting in limited device performance. The large capacitance and sufficient breakdown voltage of the insulating layer with an appropriate thickness significantly improved p-type performance. However, a reduced n-type performance was observed owing to the increased electron trap density caused by fluorine proportional to the insulator thickness. Hence, precise control of the insulator thickness is crucial for achieving low-voltage operation with enhanced s-SWNT-FET performance.
Ali Al Hassan et al 2024 Nanotechnology 35 295705
We report on the fabrication of a novel design of GaAs/(In,Ga)As/GaAs radial nanowire heterostructures on a Si 111 substrate, where, for the first time, the growth of inhomogeneous shells on a lattice mismatched core results in straight nanowires instead of bent. Nanowire bending caused by axial tensile strain induced by the (In,Ga)As shell on the GaAs core is reversed by axial compressive strain caused by the GaAs outer shell on the (In,Ga)As shell. Progressive nanowire bending and reverse bending in addition to the axial strain evolution during the two processes are accessed by in situ by x-ray diffraction. The diameter of the core, thicknesses of the shells, as well as the indium concentration and distribution within the (In,Ga)As quantum well are revealed by 2D energy dispersive x-ray spectroscopy using a transmission electron microscope. Shell(s) growth on one side of the core without substrate rotation results in planar-like radial heterostructures in the form of free standing straight nanowires.
Shahzad Hussain et al 2024 Nanotechnology 35 295704
Most of the applied research on BiFeO3 (BFO) focuses on magnetoelectric and spintronic applications. This calls for a detailed grasp of multiferroic and conduction properties. BFO thin films with (100) epitaxial growth has been deposited on a LaNiO3 (LNO) buffered Pt/Ti/SiO2/Si(100) substrate using RF magnetron sputtering. The film formed at 15 mTorr, 570 °C, and with Ar/O2 4:1 had a reasonably high degree of (100)-preferential orientation, the least surface roughness, and a densely packed structure. We obtained ferroelectric loops with strong polarization (150 μC cm−2). The leakage current density is as low as 10–2 A cm−2 at 100 kV cm−1, implying that space-charge-limited bulk conduction (SCLC) was the primary conduction channel for carriers within BFO films. Local electrical conduction behavior demonstrates that at lower voltages, the grain boundary dominates electrical conduction and is linked to the displacement of oxygen vacancies in the grain boundary under external electric fields. We hope that a deeper understanding of the conduction mechanism will help integrate BFO into viable technologies.
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Haonan Zhao et al 2024 Nanotechnology 35 292002
Recent advances in materials science, device designs and advanced fabrication technologies have enabled the rapid development of transient electronics, which represents a class of devices or systems that their functionalities and constitutions can be partially/completely degraded via chemical reaction or physical disintegration over a stable operation. Therefore, numerous potentials, including zero/reduced waste electronics, bioresorbable electronic implants, hardware security, and others, are expected. In particular, transient electronics with biocompatible and bioresorbable properties could completely eliminate the secondary retrieval surgical procedure after their in-body operation, thus offering significant potentials for biomedical applications. In terms of material strategies for the manufacturing of transient electronics, silicon nanomembranes (SiNMs) are of great interest because of their good physical/chemical properties, modest mechanical flexibility (depending on their dimensions), robust and outstanding device performances, and state-of-the-art manufacturing technologies. As a result, continuous efforts have been made to develop silicon-based transient electronics, mainly focusing on designing manufacturing strategies, fabricating various devices with different functionalities, investigating degradation or failure mechanisms, and exploring their applications. In this review, we will summarize the recent progresses of silicon-based transient electronics, with an emphasis on the manufacturing of SiNMs, devices, as well as their applications. After a brief introduction, strategies and basics for utilizing SiNMs for transient electronics will be discussed. Then, various silicon-based transient electronic devices with different functionalities are described. After that, several examples regarding on the applications, with an emphasis on the biomedical engineering, of silicon-based transient electronics are presented. Finally, summary and perspectives on transient electronics are exhibited.
Zhongliang Xiao et al 2024 Nanotechnology 35 292001
In the context of 'energy shortage', developing a novel energy-based power system is essential for advancing the current power system towards low-carbon solutions. As the usage duration of lithium-ion batteries for energy storage increases, the nonlinear changes in their aging process pose challenges to accurately assess their performance. This paper focuses on the study LiFeO4(LFP), used for energy storage, and explores their performance degradation mechanisms. Furthermore, it introduces common battery models and data structures and algorithms, which used for predicting the correlation between electrode materials and physical parameters, applying to state of health assessment and thermal warning. This paper also discusses the establishment of digital management system. Compared to conventional battery networks, dynamically reconfigurable battery networks can realize real-time monitoring of lithium-ion batteries, and reduce the probability of fault occurrence to an acceptably low level.
Luca Piantanida et al 2024 Nanotechnology 35 273001
DNA Nanotechnology is being applied to multiple research fields. The functionality of DNA nanostructures is significantly enhanced by decorating them with nanoscale moieties including: proteins, metallic nanoparticles, quantum dots, and chromophores. Decoration is a complex process and developing protocols for reliable attachment routinely requires extensive trial and error. Additionally, the granular nature of scientific communication makes it difficult to discern general principles in DNA nanostructure decoration. This tutorial is a guidebook designed to minimize experimental bottlenecks and avoid dead-ends for those wishing to decorate DNA nanostructures. We supplement the reference material on available technical tools and procedures with a conceptual framework required to make efficient and effective decisions in the lab. Together these resources should aid both the novice and the expert to develop and execute a rapid, reliable decoration protocols.
Aini Ayunni Mohd Raub et al 2024 Nanotechnology 35 242004
Nanostructured metal oxide semiconductors have emerged as promising nanoscale photocatalysts due to their excellent photosensitivity, chemical stability, non-toxicity, and biocompatibility. Enhancing the photocatalytic activity of metal oxide is critical in improving their efficiency in radical ion production upon optical exposure for various applications. Therefore, this review paper provides an in-depth analysis of the photocatalytic activity of nanostructured metal oxides, including the photocatalytic mechanism, factors affecting the photocatalytic efficiency, and approaches taken to boost the photocatalytic performance through structure or material modifications. This paper also highlights an overview of the recent applications and discusses the recent advancement of ZnO-based nanocomposite as a promising photocatalytic material for environmental remediation, energy conversion, and biomedical applications.
Hao Liu et al 2024 Nanotechnology 35 242003
Over the past few decades, single-element semiconductors have received a great deal of attention due to their unique light-sensitive and heat-sensitive properties, which are of great application and research significance. As one promising material, selenium, being a typical semiconductor, has attracted significant attention from researchers due to its unique properties including high optical conductivity, anisotropic, thermal conductivity, and so on. To promote the application of selenium nanomaterials in various fields, numerous studies over the past few decades have successfully synthesized selenium nanomaterials in various morphologies using a wide range of physical and chemical methods. In this paper, we review and summarise the different methods of synthesis of various morphologies of selenium nanomaterials and discuss the applications of different nanostructures of selenium nanomaterials in optoelectronic devices, chemical sensors, and biomedical applications. Finally, we discuss possible challenges for selenium nanodevices and provide an outlook on the future applications of selenium nanomaterials.
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Mientjes et al
Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform.
Bassi et al
For deep ultraviolet (UV-C) photodetectors, Gallium oxide (Ga2O3) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of Ga2O3 with an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtS2 group-10 transitional metal dichalcogenide (TMDC) stands at the top owing to its narrow band gap (0.25-1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with Ga2O3 sensing in UV and PtS2 broad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D-3D PtS2-x/Ga2O3 heterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS2-x/Ga2O3 device shows a high responsivity of 38.7 AW 1 and detectivity of 4.8×1013 Jones under 1100 nm light illumination at 5V bias. A fast response of 90 ms /86 ms illustrates the device's fast speed. An interface study between the PtS2-x and Ga2O3 was conducted using X-ray photoelectron spectroscopy and Ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D-3D heterostructures based photodetectors for future optoelectronics devices.
Chiang
A novel ballistic model for the subthreshold current of nanosheet transistors is successfully developed based on the Landauer approach with the three-dimensional number of channels. The ballistic threshold voltage can also be achieved through the calculated free charge density induced by the three-dimensional density-of-states equal to the substrate doping concentration. It indicates that under the low drain voltage corresponding to the fermi distribution function, the subthreshold current is mainly governed by the low contact potential. However, under the high drain voltage corresponding to the fermi distribution function, the thermal voltage, instead of the contact potential between the source and drain, initiates the subthreshold current. Besides subthreshold current and threshold voltage, the ballistic conductance and subthreshold swing are also revealed in the subthreshold conduction. It indicates that the thin silicon, thin gate oxide, heavy substrate doping density, and high work function will alleviate the ballistic effects, decrease the subthreshold current/swing, and increase the threshold voltage/ballistic resistance.
Bhattacharya et al
We have investigated the PECVD growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With the Pd of 122 mW/cm2 and ~2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S/cm, and activation energy of ~23 meV from the ~30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ~2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ~71 % to ~75 %, mainly due to a reduction in electron-selective contact resistivity from ~271 mΩ-cm2 to ~61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ~19.90% and pseudo-efficiency of ~21.90% have been realized from the SHJ cells.
Aparicio-Huacarpuma et al
In this study, copper thin films were deposited through thermal evaporation, with film thickness controlled by modulating the Z-position. The grain size (< D >) exhibited a power law relationship (< D >∝ ωn) with n approximately 0.41 for as-fabricated copper films. Resistivity ranged from 3.3 to 4.6 µΩ·cm, aligning with expectations for crystallites sized between 20 and 26 nm. Cuprite (Cu2O) thin films were produced via thermal annealing, revealing crystallite sizes from ∼9 nm to ∼24 nm as film thickness increased. Optical bandgap varied monotonically from 2.31 to 2.17 eV with increasing film thickness, attributed to the quantum confinement effect. Refractive index and extinction coefficient also showed film-thickness dependence, with a linear relationship observed between the refractive index and charge carrier density. Electrical measurements indicated p-type semiconductors with carrier concentrations of ∼ 1014cm−3, slightly decreasing with film thickness. Thinner cuprite films exhibited enhanced sensitivity to ethanol gas at room temperature, holding promise for he development of highly responsive gas sensors
for portable devices, especially for ethanol breath testing.
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Mathijs Mientjes et al 2024 Nanotechnology
Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform.
Marlen Alexis Gonzalez-Reyna et al 2024 Nanotechnology
For the first time, this study shows the nanoarchitectonic process to obtain an acetogenin-enriched nanosystem (AuNPs-Ac) using an aqueous extract from Annona cherimola Mill (ACM) composed of gold nanoparticles embedded in an organic matrix that acts as stabilizing agent and presents anti-inflammatory activity and cytotoxical effect against HepG2 cell line, promoting apoptosis. The synthesis of AuNPs-Ac was confirmed by X-ray diffraction analysis, showing metallic gold as the only phase, and the scanning transmission microscope showed an organic cap covering the AuNPs-Ac. Fourier-transformed infrared suggests that the organic cap comprises a combination of different annonaceous acetogenins, alkaloids, and phenols by the presence of bands corresponding to aromatic rings and hydroxyl groups. High-Performance Liquid Chromatography has demonstrated the presence of annonacin, a potent acetogenin, in the extract of ACM. An in vitro anti-inflammatory activity of the extract of ACM and the AuNPs-Ac was performed using the albumin denaturation method, showing a nonlinear response, which is better than sodium diclofenac salt in a wide range of concentrations that goes from 200 to 400 µg/mL with both samples. The viability assay was studied using trypan blue, treating IMR90 and HepG2 at different concentrations of AuNPs-Ac. The results defined a median lethal dose of 800 µg/mL against HepG2 through apoptosis according to the ratio of caspase-cleaved 9/alpha-tubulin evaluated. It was also demonstrated that the nanosystem presents a higher cytotoxic effect on the HepG2 cell line than in IMR90, suggesting a targeted mechanism. In addition, the nanosystem performs better than using only the extract of ACM in the anti-inflammatory or antiproliferative test, attributed to their higher surface area.
Ibukun Israel Olaniyan et al 2024 Nanotechnology
The realization of perovskite oxide nanostructures with controlled shape and dimensions remains a challenge. Here, we investigate the use of helium and neon focused ion beam (FIB) milling in an ion microscope to fabricate BaTiO3 nanopillars of sub-500 nm diameter from BaTiO3 (001) single crystals. Irradiation of BaTiO3 with He ions induces the formation of nanobubbles inside the material eventually leading to surface swelling and blistering. Ne FIB is shown to be suitable for milling without inducing surface swelling. The resulting defect-free single crystal nanostructures are enveloped by a neon-rich amorphous and a point defect-rich crystalline layers both on top and lateral sides. The amorphous shell can be selectively removed by dipping the nanostructures in diluted HF. The geometry and beam-induced damage of the milled nanostructures depend strongly on the patterning parameters and can be well controlled. Ne ion milling is shown to be an effective method to rapidly prototype BaTiO3 crystalline nanostructures.
Ali Al Hassan et al 2024 Nanotechnology 35 295705
We report on the fabrication of a novel design of GaAs/(In,Ga)As/GaAs radial nanowire heterostructures on a Si 111 substrate, where, for the first time, the growth of inhomogeneous shells on a lattice mismatched core results in straight nanowires instead of bent. Nanowire bending caused by axial tensile strain induced by the (In,Ga)As shell on the GaAs core is reversed by axial compressive strain caused by the GaAs outer shell on the (In,Ga)As shell. Progressive nanowire bending and reverse bending in addition to the axial strain evolution during the two processes are accessed by in situ by x-ray diffraction. The diameter of the core, thicknesses of the shells, as well as the indium concentration and distribution within the (In,Ga)As quantum well are revealed by 2D energy dispersive x-ray spectroscopy using a transmission electron microscope. Shell(s) growth on one side of the core without substrate rotation results in planar-like radial heterostructures in the form of free standing straight nanowires.
Yucheng Hu et al 2024 Nanotechnology 35 295702
Cathodoluminescence and electron backscatter diffraction have been applied to exactly the same grain boundaries (GBs) in a Cu(In,Ga)S2 solar absorber in order to investigate the influence of microstructure on the radiative recombination behaviour at the GBs. Two different types of GB with different microstructure were analysed in detail: random high angle grain boundaries (RHAGBs) and Σ3 GBs. We found that the radiative recombination at all RHAGBs was inhibited to some extent, whereas at Σ3 GBs three different observations were made: unchanged, hindered, or promoted radiative recombination. These distinct behaviours may be linked to atomic-scale grain boundary structural differences. The majority of GBs also exhibited a small spectral shift of about ±10 meV relative to the local grain interior (GI) and a few of them showed spectral shifts of up to ±40 meV. Red and blue shifts were observed with roughly equal frequency.
Wei Cheat Lee et al 2024 Nanotechnology 35 295301
A hierarchical sea urchin-like hybrid metal oxide nanostructure of ZnO nanorods deposited on TiO2 porous hollow hemispheres with a thin zinc titanate interface layer is specifically designed and synthesized to form a combined type I straddling and type II staggered junctions. The HHSs, synthesized by electrospinning, facilitate light trapping and scattering. The ZnO nanorods offer a large surface area for improved surface oxidation kinetics. The interface layer of zinc titanate (ZnTiO3) between the TiO2 HHSs and ZnO nanorods regulates the charge separation in a closely coupled hierarchy structure of ZnO/ZnTiO3/TiO2. The synergistic effects of the improved light trapping, charge separation, and fast surface reaction kinetics result in a superior photoconversion efficiency of 1.07% for the photoelectrochemical water splitting with an outstanding photocurrent density of 2.8 mA cm−2 at 1.23 V versus RHE.
Rahnuma Rahman et al 2024 Nanotechnology
Stochastic neurons are efficient hardware accelerators for solving a large variety of combinatorial optimization problems. "Binary" stochastic neurons (BSN) are those whose states fluctuate randomly between two levels +1 and -1, with the probability of being in either level determined by an external bias. "Analog" stochastic neurons (ASNs), in contrast, can assume any state between the two levels randomly (hence "analog") and can perform analog signal processing. They may be leveraged for such tasks as temporal sequence learning, processing and prediction. Both BSNs and ASNs can be used to build efficient and scalable neural networks. Both can be implemented with low (potential energy) barrier nanomagnets (LBMs) whose random magnetization orientations encode the binary or analog state variables. The difference between them is that the potential energy barrier in a BSN LBM, albeit low, is much higher than that in an ASN LBM. As a result, a BSN LBM has a clear double well potential profile, which makes its magnetization orientation assume one of two orientations at any time, resulting in the binary behavior. ASN nanomagnets, on the other hand, hardly have any energy barrier at all and hence lack the double well feature. That makes their magnetizations fluctuate in an analog fashion. Hence, one can reconfigure an ASN to a BSN, and vice-versa, by simply raising and lowering the energy barrier. If the LBM is magnetostrictive, then this can be done with local (electrically generated) strain. Such a reconfiguration capability heralds a powerful field programmable architecture for a p-computer whereby hardware for very different functionalities such as combinatorial optimization and temporal sequence learning can be integrated in the same substrate in the same processing run. This is somewhat reminiscent of heterogeneous integration, except this is integration of functionalities or computational fabrics rather than components. The energy cost of reconfiguration is miniscule. There are also other applications of strain mediated barrier control that do not involve reconfiguring a BSN to an ASN or vice versa, e.g., adaptive annealing in energy minimization computing (Boltzmann or Ising machines), emulating memory hierarchy in a dynamically reconfigurable fashion, and control over belief uncertainty in analog stochastic neurons. Here, we present a study of strain engineered barrier control in unconventional computing.
Irene Ayuso-Perez et al 2024 Nanotechnology
Semiconductor nanowires (NWs) are promising candidates for use in electronic and optoelectronic applications, offering numerous advantages over their thin film counterparts. Their performance relies heavily on the quality of the contacts to the NW, which should exhibit ohmic behavior with low resistance and should be formed in a reproducible manner. In the case of heterostructure NWs for high-mobility applications that host a two-dimensional electron gas (2DEG), ohmic contacts are particularly challenging to implement since the NW core constituting the conduction channel is away from the NW surface. We investigated contact formation to modulation-doped GaAs/(Al,Ga)As core/shell NWs using scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDX) and electron tomography (ET) to correlate microstructure, diffusion profile and chemical composition of the NW contact region with the current-voltage (I-V) characteristics of the contacted NWs. Our results illustrate how diffusion, alloying and phase formation processes essential to the effective formation of ohmic contacts are more intricate than in planar layers, leading to reproducibility challenges even when the processing conditions are the same. We demonstrate that the NW geometry plays a crucial role in the creation of good contacts. Both ohmic and rectifying contacts were obtained under nominally identical processing conditions. Furthermore, the presence of Ge in the NW core, in the absence of Au and Ni, was found as the key factor leading to ohmic contacts. The analysis contributes to the current understanding of ohmic contact formation to heterostructure core/shell NWs offering pathways to enhance the reproducibility and further optimization of such NW contacts.
Robert Daly et al 2024 Nanotechnology 35 285704
Surface enhanced Raman spectroscopy (SERS) is a powerful analytical technique that has found application in the trace detection of a wide range of contaminants. In this paper, we report on the fabrication of 2D silver nanodendrites, on silicon chips, synthesized by electrochemical reduction of AgNO3 at microelectrodes. The formation of nanodendrites is tentatively explained in terms of electromigration and diffusion of silver ions. Electrochemical characterization suggests that the nanodendrites do not stay electrically connected to the microelectrode. The substrates show SERS activity with an enhancement factor on the order of 106. Density functional theory simulations were carried out to investigate the suitability of the fabricated substrate for pesticide monitoring. These substrates can be functionalized with cyclodextrin macro molecules to help with the detection of molecules with low affinity with silver surfaces. A proof of concept is demonstrated with the detection of the herbicide 2-methyl-4-chlorophenoxyacetic acid (MCPA).
Philipp Hönicke et al 2024 Nanotechnology 35 285702
Spatially resolved x-ray fluorescence (XRF) based analysis employing incident beam sizes in the low micrometer range (μXRF) is widely used to study lateral composition changes of various types of microstructured samples. However, up to now the quantitative analysis of such experimental datasets could only be realized employing adequate calibration or reference specimen. In this work, we extent the applicability of the so-called reference-free XRF approach to enable reference-free μXRF analysis. Here, no calibration specimen are needed in order to derive a quantitative and position sensitive composition of the sample of interest. The necessary instrumental steps to realize reference-free μXRF are explained and a validation of ref.-free μXRF against ref.-free standard XRF is performed employing laterally homogeneous samples. Finally, an application example from semiconductor research is shown, where the lateral sample features require the usage of ref.-free μXRF for quantitative analysis.