Abstract
Resistance switching behavior has been investigated in as-prepared and oxygen-annealed polycrystalline tungsten oxide films using conductive atomic force microscopy. The oxygen-annealed film appeared more insulative than the as-prepared films. The local current distributions demonstrated the lower conductivity at the grain boundaries than at the grains in the oxygen-annealed films. Reversible resistance switching behavior only occurred at the grain surface region of the oxygen-annealed films and the resistance switching process was described by the local valence change of tungsten ions induced by electrochemical migration of protons or oxygen vacancies. This different resistance switching behavior between the grain and grain boundary surface was attributed to the different oxygen vacancy density caused by the post-annealing process. The present results would be especially meaningful for the fabrication of nanoscale resistive nonvolatile memory devices.
Export citation and abstract BibTeX RIS