With the shrinkage of integrated circuit devices, direct process control is expected to improve productivity by monitoring the process in real time. A vacuum rapid thermal processing system is described in detail for microelectronic applications. It has features of rapid thermal processing, UV assisted processing, chemical vapour deposition, O3 processing and in situ process/sample characterization. The in situ process/sample characterization includes infrared spectroscopy, ellipsometry, goniometry and residual gas analyser. These techniques enable the probing of film properties, interfaces, film thickness, surface contact angles and gas phase chemistry. The system is capable of various microelectronic processes such as gate dielectrics formation, ozone surface oxidation, low k dielectric formation and chemical vapour deposition. An exemplary application of the system is demonstrated in Si oxidation.